2008-04-07 rev. 2.5 page 1 spu01n60c3 spd01n60c3 cool mos? power transistor v ds @ t j ma x 650 v r ds ( on ) 6 ? i d 0.8 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p g -to251 p g -to252 type package ordering code spu01n60c3 p g -to251 q67040-s4193 spd01n60c3 p g -to252 q67040-s4188 marking 01n60c3 01n60c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 0.8 0.5 a pulsed drain current, t p limited by t j ma x i d p uls 1.6 avalanche energy, single pulse i d = 0.6 a, v dd = 50 v e as 20 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 0.8 a, v dd = 50 v e ar 0.01 avalanche current, repetitive t a r limited by t j ma x i a r 0.8 a gate source voltage static v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 11 w operating and storage temperature t j , t st g -55... +150 c reverse diode dv/dt dv/dt 15 v/ns 3)
2008-04-07 rev. 2.5 page 2 spu01n60c3 spd01n60c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 0.8 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 11 k/w thermal resistance, junction - ambient, leaded r thja - - 75 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =0.8a - 700 - gate threshold voltage v gs ( th ) i d =250 , v gs = v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - 0.1 - 1 50 a gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =0.5a, t j =25c t j =150c - - 5.6 15.1 6 - *)
2008-04-07 rev. 2.5 page 3 spu01n60c3 spd01n60c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =0.5a - 0.75 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 100 - pf output capacitance c oss - 40 - reverse transfer capacitance c rss - 2.5 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =0.8a, r g =100 - 30 - ns rise time t r - 25 - turn-off delay time t d(off) - 55 82 fall time t f - 30 45 gate charge characteristics gate to source charge q gs v dd =350v, i d =0.8a - 0.9 - nc gate to drain charge q gd - 2.2 - gate charge total q g v dd =350v, i d =0.8a, v gs =0 to 10v - 3.9 5 gate plateau voltage v ( plateau ) v dd =350v, i d =0.8a - 5.5 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 i sd <=i d , di/dt<=400a/us, v dclink =400v, v peak 2008-04-07 rev. 2.5 page 4 spu01n60c3 spd01n60c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 0.8 a inverse diode direct current, pulsed i sm - - 1.6 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 570 970 ns reverse recovery charge q rr - 0.75 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.225 k/w r th2 0.395 r th3 0.603 r th4 0.995 r th5 0.691 r th6 0.148 thermal capacitance c th1 0.00001221 ws/k c th2 0.00005037 c th3 0.0000809 c th4 0.0002915 c th5 0.001844 c th6 0.412 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2008-04-07 rev. 2.5 page 5 spu01n60c3 spd01n60c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 1 2 3 4 5 6 7 8 9 10 w 12 spu01n60c3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -2 10 -1 10 0 10 1 10 2 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 0.5 1 1.5 a 2.5 i d 5v 5.5v 6v 6.5v 7v 20v 10v
2008 -04-07 rev. 2.5 page 6 spu01n60c3 spd01n60c3 5 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.5 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 4 8 12 16 20 24 28 34 spu01n60c3 r ds(on) typ 98% 6 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v gs 20 v 0 0.5 1 1.5 a 2.5 i d 7 typ. gate charge v gs = f ( q gate ) parameter: i d = 0.8 a pulsed 0 1 2 3 4 nc 5.5 q gate 0 2 4 6 8 10 12 v 16 spu01n60c3 v gs 0.2 v ds max 0.8 v ds max 8 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a spu01n60c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2008-04-07 rev. 2.5 page 7 spu01n60c3 spd01n60c3 9 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 a 0.9 i ar t j(start) =25c t j(start) =125c 10 avalanche energy e as = f ( t j ) par.: i d = 0.6 a, v dd = 50 v 25 50 75 100 125 150 c 200 t j 0 2 4 6 8 10 12 14 16 18 mj 22 e as 11 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spu01n60c3 v (br)dss 12 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 10 20 30 40 50 60 70 80 v 100 v ds 0 10 1 10 2 10 3 10 pf c c rss c oss c iss
2008-04-07 rev. 2.5 page 8 spu01n60c3 spd01n60c3 definition of diodes switching characteristics
2008-04-07 rev. 2.5 page 9 spu01n60c3 spd01n60c3 p g -to-252-3-1 (d-pak), pg-to-252-3-11 (d-pak), pg-to-252-3-21 (d-pak)
2008-04-07 rev. 2.5 page 10 spu01n60c3 spd01n60c3 pg-to-251-3-1 (i-pak), pg-to-251-3-21 (i-pak)
2008-04-07 rev. 2.5 page 11 spu01n60c3 spd01n60c3
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